Title :
Poly-silicon thin layer photodetector structures
Author :
Budianu, E. ; Purica, M. ; Manea, E. ; Kusko, M.
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnologies, Bucharest, Romania
fDate :
28 Sept.-2 Oct. 2003
Abstract :
A photodetector structure based on thin poly-Si layers together with technological process and structure optoelectronic characterisation are presented. The optical improvement of the structure by the reflection of unabsorbed radiation on the backside and by the reflectance minimizing on the topside by antireflecting coating was analyzed. The structure optoelectronic characterization revealed a good sensibility of 60 μA/klx and a fast response.
Keywords :
antireflection coatings; elemental semiconductors; photodetectors; semiconductor thin films; silicon; Si; antireflecting coating; polysilicon thin layer photodetector structures; structure optoelectronic characterisation; thin poly-Si layers; unabsorbed radiation reflection; Absorption; Coatings; High speed optical techniques; Optical films; Optical sensors; Optical surface waves; Photodetectors; Reflectivity; Silicon; Thin film transistors;
Conference_Titel :
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN :
0-7803-7821-0
DOI :
10.1109/SMICND.2003.1251366
