Title :
Gate and emitter design for high frequency thyristors
Abstract :
To minimize the switching loss of high frequency thyristors, three kinds of multifinger gates and emitter designs are studied. The device characteristics were evaluated. The power loss during high frequency operation was measured. The rate of rise of forward current was studied.
Keywords :
Assembly; Cathodes; Fingers; Logic gates; Silicon; Testing; Thyristors;
Conference_Titel :
Power Electronics Specialists Conference, 1979 IEEE
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/PESC.1979.7081012
