Title :
Circuit performance characterization of digital 45-nm CMOS technology for applications around 110 GHz
Author :
Aroca, R.A. ; Tomkins, A. ; Doi, Y. ; Yamamoto, T. ; Voinigescu, S.P.
Author_Institution :
Edward S. Rogers Sr. Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON
Abstract :
The first 50-GHz to 110-GHz downconverter in 45-nm digital CMOS is presented along with the mm-wave characterization of AMOS varactors, inductors and transformers. The varactor Q is higher than 6, up to 94 GHz. The downconverter gain is 15 dB at 111GHz, and is employed as a broadband test vehicle to characterize the optimal noise figure current density (JOPT) of 45-nm MOSFETs in the 50 GHz to 110 GHz range.
Keywords :
CMOS digital integrated circuits; MOSFET; field effect MIMIC; inductors; transformers; varactors; AMOS varactors; MOSFET; digital CMOS technology; downconverter; frequency 111 GHz; frequency 50 GHz to 110 GHz; gain 15 dB; inductors; mm-wave characterization; size 45 nm; transformers; CMOS digital integrated circuits; CMOS technology; Circuit optimization; Gain; Inductors; Noise figure; Testing; Transformers; Varactors; Vehicles;
Conference_Titel :
VLSI Circuits, 2008 IEEE Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1804-6
Electronic_ISBN :
978-1-4244-1805-3
DOI :
10.1109/VLSIC.2008.4585991
