• DocumentCode
    2375869
  • Title

    Manufacturable local interconnect technology fully compatible with titanium salicide process

  • Author

    Hayashida, H. ; Toyoshima, Y. ; Shinagawa, H. ; Suizu, Y. ; Kunishima, I. ; Suguro, K. ; Hashimoto, K.

  • Author_Institution
    Semicond. Device Eng. Lab., Toshiba Corp., Kawasaki, Japan
  • fYear
    1991
  • fDate
    11-12 Jun 1991
  • Firstpage
    332
  • Lastpage
    334
  • Abstract
    Local interconnect technology has been widely accepted because of advantages such as increase of packing density and reduction of parasitics. Local interconnect technology of a new structure utilizing TiSi2 from the reaction of Ti and polysilicon is described. The technology is fully compatible with the salicide process. Moreover, the processing offers low resistivity interconnection with low junction leakage because of its inherent structure. It is confirmed that the process is manufacturable for 0.5 μm CMOS
  • Keywords
    CMOS integrated circuits; integrated circuit technology; metallisation; titanium compounds; 0.5 micron; CMOS; Ti-Si; TiSi2; local interconnect technology; low junction leakage; low resistivity interconnection; polysilicon; salicide process; CMOS process; CMOS technology; Dry etching; Fabrication; Manufacturing processes; Shape; Tin; Titanium; Ultra large scale integration; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    0-87942-673-X
  • Type

    conf

  • DOI
    10.1109/VMIC.1991.153016
  • Filename
    153016
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2375869