DocumentCode :
2376470
Title :
Models for thyristors and diode in digital simulations
Author :
Venturini, M. ; Sangiovanni-Vincentelli, A. ; Wood, P.
Author_Institution :
Department of Electrical Engineering, and Computer Sciences, University of California at Berkeley
fYear :
1979
fDate :
18-22 June 1979
Firstpage :
411
Lastpage :
419
Abstract :
Two models are proposed for digital simulations involving power diodes and thyristors. The models simulate all operating regions of the devices, and include transient and thermal behavior. Particular emphasis has been placed on reverse recovery behaviors, to improve simulation accuracy in high frequency and multiple device applications. Either model can be completely specified from standard data sheet parameters.
Keywords :
Biological system modeling; Computational modeling; Integrated circuit modeling; Junctions; Resistors; Thyristors; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 1979 IEEE
Conference_Location :
San Diego, CA, USA
ISSN :
0275-9306
Type :
conf
DOI :
10.1109/PESC.1979.7081054
Filename :
7081054
Link To Document :
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