DocumentCode
2376496
Title
A technique for increasing the useful frequency range of semiconductor devices
Author
Temple, V.A.K. ; Adler, M.S. ; Gray, P.V.
Author_Institution
General Electric Company, Corporate Research and Development Center, Schenectady, New York 12301
fYear
1979
fDate
18-22 June 1979
Firstpage
420
Lastpage
427
Abstract
The trade-off between forward voltage drop and device turn-off time can be significantly altered by the proper location of a narrow region of lower lifetime oriented perpendicular to the current flow. The proposed structure is discussed and calculations presented to illustrate this claim.
Keywords
Computers; Doping; Gold; Junctions; Switches; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1979 IEEE
Conference_Location
San Diego, CA, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1979.7081055
Filename
7081055
Link To Document