Title :
A technique for increasing the useful frequency range of semiconductor devices
Author :
Temple, V.A.K. ; Adler, M.S. ; Gray, P.V.
Author_Institution :
General Electric Company, Corporate Research and Development Center, Schenectady, New York 12301
Abstract :
The trade-off between forward voltage drop and device turn-off time can be significantly altered by the proper location of a narrow region of lower lifetime oriented perpendicular to the current flow. The proposed structure is discussed and calculations presented to illustrate this claim.
Keywords :
Computers; Doping; Gold; Junctions; Switches; Thyristors;
Conference_Titel :
Power Electronics Specialists Conference, 1979 IEEE
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/PESC.1979.7081055
