A 25-GHz, 40-mW Fully-Integrated Power Amplifier in Standard 90-nm Si-CMOS Technology

Author

Kawano, Yoichi ; Suzuki, Toshihide ; Nakasha, Yasuhiro ; Hirose, Tatsuya ; Joshin, Kazukiyo

Author_Institution

Fujitsu Ltd., Atsugi

fYear

2007

fDate

15-16 Nov. 2007

Firstpage

17

Lastpage

20

Abstract

A 25-GHz, 40-mW power amplifier with SO-Omega input and output matching circuit in standard 90-nm Si-CMOS technology is reported. The supply voltage of 3.3 V is compatible with that of conventional wireless communication systems. To enable this, a stacked cascode configuration with a Vdd = 1.2 V transistor and a Vdd = 3.3 V thick oxide transistor for digital I/O interfaces is used. The power amplifier with the total gate width of 640 mum achieves a linear gain of S dB and single-ended output power of more than 16 dBm. The chip size is 1.0 times 0.85 mm².

Keywords

CMOS integrated circuits; microwave amplifiers; power amplifiers; silicon; CMOS technology; Si; Si - Element; digital I/O interfaces; frequency 25 GHz; gain 5 dB; matching circuit; power 40 mW; power amplifier; resistance 50 ohm; size 640 mum; size 90 nm; thick oxide transistor; voltage 1.2 V; voltage 3.3 V; wireless communication systems; Conductivity; Copper; Frequency; Integrated circuit technology; Microwave bands; Millimeter wave technology; Power amplifiers; RF signals; Radiofrequency amplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. KJMW 2007. Korea-Japan

Conference_Location

Okinawa

Print_ISBN

978-1-4244-1556-4

Type

conf

DOI

10.1109/KJMW.2007.4402229

Filename

4402229