DocumentCode :
2376555
Title :
Raman and Hall-effect characterization of Zn+/P+ co-implanted GaAs subjected to rapid thermal annealing
Author :
Ursaki, V.V. ; Terletsky, A.I. ; Tiginyanu, I.M.
Author_Institution :
Inst. of Appl. Phys., Chisinau, Moldova
Volume :
1
fYear :
1998
fDate :
6-10 Oct 1998
Firstpage :
97
Abstract :
It is shown that Zn+/P+ co-implantation in combination with rapid thermal annealing (RTA) allows one to obtain p-type GaAs layers with the peak hole concentration as high as 2.1019 cm-3 and narrow impurity profile within 0.15 μm
Keywords :
Hall effect; III-V semiconductors; Raman spectra; doping profiles; gallium arsenide; hole density; ion implantation; phosphorus; rapid thermal annealing; zinc; GaAs:Zn,P; Hall effect; Raman spectra; Zn+/P+ co-implantation; hole concentration; impurity profile; p-type GaAs layer; rapid thermal annealing; Bipolar transistors; Crystals; Doping profiles; Fabrication; Gallium arsenide; Impurities; Physics; Plasma measurements; Rapid thermal annealing; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
Type :
conf
DOI :
10.1109/SMICND.1998.732294
Filename :
732294
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2376555
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