• DocumentCode
    2376555
  • Title

    Raman and Hall-effect characterization of Zn+/P+ co-implanted GaAs subjected to rapid thermal annealing

  • Author

    Ursaki, V.V. ; Terletsky, A.I. ; Tiginyanu, I.M.

  • Author_Institution
    Inst. of Appl. Phys., Chisinau, Moldova
  • Volume
    1
  • fYear
    1998
  • fDate
    6-10 Oct 1998
  • Firstpage
    97
  • Abstract
    It is shown that Zn+/P+ co-implantation in combination with rapid thermal annealing (RTA) allows one to obtain p-type GaAs layers with the peak hole concentration as high as 2.1019 cm-3 and narrow impurity profile within 0.15 μm
  • Keywords
    Hall effect; III-V semiconductors; Raman spectra; doping profiles; gallium arsenide; hole density; ion implantation; phosphorus; rapid thermal annealing; zinc; GaAs:Zn,P; Hall effect; Raman spectra; Zn+/P+ co-implantation; hole concentration; impurity profile; p-type GaAs layer; rapid thermal annealing; Bipolar transistors; Crystals; Doping profiles; Fabrication; Gallium arsenide; Impurities; Physics; Plasma measurements; Rapid thermal annealing; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-4432-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1998.732294
  • Filename
    732294
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2376555