DocumentCode
2376954
Title
Integration of SRAM redundancy into production test
Author
Jayabalan, Jayasanker ; Povazanec, Juraj
Author_Institution
Dev. Center, Transceivers Infineon Technol. Asia Pacific Pte Ltd., Singapore, Singapore
fYear
2002
fDate
2002
Firstpage
187
Lastpage
193
Abstract
In this paper, we present the implementation of a multiple-SRAM redundancy concept, which increases the yield of a 100 mm2, 0.18 micron technology device with a total memory size of 3 Mbits, by a factor of 20%. A number of test and design considerations are detailed.
Keywords
SRAM chips; built-in self test; integrated circuit design; integrated circuit testing; integrated circuit yield; production testing; redundancy; system-on-chip; 0.18 micron; 3 Mbit; BIST; MBIST; SOC applications; SRAM redundancy; memory built-in self-test; memory size; multiple-SRAM redundancy concept; redundancy production test integration; system-on-chip devices; yield increase; Asia; Circuit faults; Circuit testing; Fuses; Logic; Production; Random access memory; Redundancy; Registers; Transceivers;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Conference, 2002. Proceedings. International
ISSN
1089-3539
Print_ISBN
0-7803-7542-4
Type
conf
DOI
10.1109/TEST.2002.1041760
Filename
1041760
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