Title :
A general model for PVD aluminum deposition
Author :
Cale, T.S. ; Gandy, T.H. ; Jain, M.K. ; Ramaswami, M. ; Raupp, G.B.
Author_Institution :
Dept. of Chem., Bio & Mater. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
A model for free molecular transport, surface diffusion and heterogeneous reactions in features during low pressure deposition processes is specialized to simulate film profile evolution during sputtered Al PVD. The dimensionless parameter which results from nondimensionalizing the governing equation dictates film profiles. Feature size dependent step coverages are demonstrated in trenches of aspect ratio one
Keywords :
aluminium; metallic thin films; metallisation; sputter deposition; surface diffusion; Al sputtering; PVD; aspect ratio; feature size dependent step coverages; film profile evolution; free molecular transport; heterogeneous reactions; low pressure deposition; model; surface diffusion; Aluminum; Artificial intelligence; Atherosclerosis; Biological materials; Chemical engineering; Chemical processes; Differential equations; Predictive models; Solid modeling; Solid state circuits;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.153022
