A Novel Silicon High Voltage Vertical MOSFET Technology for a 100W L-Band Radar Application

Author

Battaglia, Brian ; Rice, Dave ; Le, Phuong ; Gogoi, Bishnu ; Hoshizaki, Gary ; Purchine, Mike ; Davies, Robert ; Wright, Walt ; Lutz, Dave ; Gao, Mike ; Moline, Dan ; Elliot, Alex ; Tran, Son ; Neeley, Robert

Author_Institution

HVVi Semicond., Phoenix, AZ

fYear

2008

fDate

27-31 Oct. 2008

Firstpage

1437

Lastpage

1440

Abstract

The silicon vertical MOSFET RF power amplifier described in this paper is the industry´s first to utilize high voltage vertical technology. Operating under pulse conditions of 200 musec pulse width and 10% duty cycle it delivers more than 100 W of peak power. Operating in Class AB with only 50 mA of bias current the device achieves more than 20 dB of gain and 47% power added efficiency at P1dB compression across 200 MHz of bandwidth at L-Band from 1.2 GHz to 1.4 GHz. The DC characteristics include a BVdss of 115 volts enabling high voltage operation with a 48 V power supply.

Keywords

elemental semiconductors; microwave power amplifiers; microwave power transistors; power MOSFET; silicon; RF power amplifier; Si; bias current; current 50 mA; duty cycle; efficiency 47 percent; frequency 1.2 GHz to 1.4 GHz; frequency 200 MHz; high voltage operation; high voltage vertical field effect transistor; power 100 W; power added efficiency; power supply; pulse width; silicon vertical MOSFET; time 200 mus; voltage 48 V; High power amplifiers; L-band; MOSFET circuits; Power MOSFET; Pulse amplifiers; Radar applications; Radio frequency; Silicon; Space vector pulse width modulation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. EuMC 2008. 38th European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-006-4

Type

conf

DOI

10.1109/EUMC.2008.4751736

Filename

4751736