DocumentCode :
2377276
Title :
Ultrasound treatment as a new way for defect engineering in semiconductor materials and devices
Author :
Sheinkman, Moisey K. ; Korsunskaya, Nadezhda E. ; Ostapenko, Sergey S.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kyiv, Ukraine
Volume :
1
fYear :
1998
fDate :
6-10 Oct 1998
Firstpage :
183
Abstract :
UltraSound Treatment, UST, of semiconductors in many cases results in a stable improvement of material properties and device parameters and thus can be used in a defect engineering. The physical backgrounds of such effects as well as UST methods and apparatus are described
Keywords :
crystal defects; semiconductor technology; ultrasonic applications; defect engineering; semiconductor device; semiconductor material; ultrasound treatment; Crystalline materials; Material properties; Microelectronics; Piezoelectric transducers; Resonance; Semiconductor materials; Solids; Ultrasonic imaging; Ultrasonic transducers; Vibration control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
Type :
conf
DOI :
10.1109/SMICND.1998.732332
Filename :
732332
Link To Document :
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