DocumentCode
2377276
Title
Ultrasound treatment as a new way for defect engineering in semiconductor materials and devices
Author
Sheinkman, Moisey K. ; Korsunskaya, Nadezhda E. ; Ostapenko, Sergey S.
Author_Institution
Inst. of Semicond. Phys., Acad. of Sci., Kyiv, Ukraine
Volume
1
fYear
1998
fDate
6-10 Oct 1998
Firstpage
183
Abstract
UltraSound Treatment, UST, of semiconductors in many cases results in a stable improvement of material properties and device parameters and thus can be used in a defect engineering. The physical backgrounds of such effects as well as UST methods and apparatus are described
Keywords
crystal defects; semiconductor technology; ultrasonic applications; defect engineering; semiconductor device; semiconductor material; ultrasound treatment; Crystalline materials; Material properties; Microelectronics; Piezoelectric transducers; Resonance; Semiconductor materials; Solids; Ultrasonic imaging; Ultrasonic transducers; Vibration control;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location
Sinaia
Print_ISBN
0-7803-4432-4
Type
conf
DOI
10.1109/SMICND.1998.732332
Filename
732332
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