320 Gb/s high-speed ATM switching system hardware technologies based on copper-polyimide MCM

Author

Yamanaka, Naoaki ; Endo, Ken-ichi ; Genda, Kouichi ; Fukuda, Hideki ; Kishimoto, Tohru ; Sasaki, Shin-ichi

Author_Institution

NTT Commun. Switching Labs., Musashino, Japan

fYear

1994

fDate

1-4 May 1994

Firstpage

776

Lastpage

785

Abstract

This paper describes a 320 Gb/s high-speed multi-chip ATM switching system for broadband ISDN. This system employs a copper-polyimide MCM with 4-layer copper-polyimide signal transmission layers and 15-layer ceramic power supply layers. The system uses 64 MCMs that are interconnected by 98-highway flexible printed circuit connector. Si-bipolar VLSIs are mounted on MCM using the 150 μm very-thin pitch outer lead TAB technique. In addition, a high-performance heat-pipe air cooling technique is adopted. The system switches ATM cells up to 320 Gb/s throughput and it is applicable for future B-ISDN

Keywords

B-ISDN; VLSI; asynchronous transfer mode; cooling; copper; electronic switching systems; multichip modules; polymer films; tape automated bonding; 150 micron; 320 Gbit/s; ATM switching system hardware technologies; B-ISDN; Cu; Cu-polyimide MCM; Si; Si bipolar VLSIs; TAB technique; broadband ISDN; ceramic power supply layers; flexible printed circuit connector; heat-pipe air cooling; high-speed ATM switching; packaging; signal transmission layers; Asynchronous transfer mode; B-ISDN; Ceramics; Connectors; Flexible printed circuits; Hardware; Integrated circuit interconnections; Power supplies; Power system interconnection; Switching systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 1994. Proceedings., 44th

Conference_Location

Washington, DC

Print_ISBN

0-7803-0914-6

Type

conf

DOI

10.1109/ECTC.1994.367582

Filename

367582