Plasma resistant modified I-line, deep UV and E-beam resists

Author

Bousaba, J.E. ; Tranjan, F.M. ; Qushair, L.E. ; DuBois, T.D. ; Bobbio, S.M. ; Jose, M.T. ; Nickel, J.L. ; Jones, S.K. ; Dudley, B.

Author_Institution

Dept. of Electr. Eng., North Carolina Univ., Charlotte, NC, USA

fYear

1994

fDate

1-4 May 1994

Firstpage

712

Lastpage

715

Abstract

This paper presents chemically modified photoresists for use as plasma etch masks over various substrates during patterning in IC manufacturing with sub-0.5 micron resolution. The modification consists of directly adding the modifying compounds into the photoresist solutions. The added compounds increase the Oxygen, Fluorine and Chlorine plasma resistance of photoresists, thus promoting a high etch rate selectivity with respect to other substrates and films (e.g. polyimide, PMGI, oxide, etc.)

Keywords

electron resists; integrated circuit technology; masks; photoresists; sputter etching; 0.5 micron; Cl; E-beam resists; F₂; I-line resists; IC manufacturing; O₂; PMGI; chemically modified photoresists; chlorine; deep UV resists; etch rate selectivity; films; fluorine; oxide; oxygen; patterning; plasma etch masks; plasma resistance; polyimide; sub-0.5 micron resolution; substrates; Chemical technology; Etching; Oxygen; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma properties; Polyimides; Resists; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 1994. Proceedings., 44th

Conference_Location

Washington, DC

Print_ISBN

0-7803-0914-6

Type

conf

DOI

10.1109/ECTC.1994.367592

Filename

367592