• DocumentCode
    2378176
  • Title

    Improvement of the recovery characteristics of high power thyristors by selective irradiation

  • Author

    Banu, Viorel ; Iliescu, Elena ; Niculescu, Anastaw ; Apostolesc, Mihai ; Sturzu, Nicoleta

  • Author_Institution
    Baneasa SA, Bucharest, Romania
  • Volume
    1
  • fYear
    1998
  • fDate
    6-10 Oct 1998
  • Firstpage
    285
  • Abstract
    A method to improve the switching time of the fast high power thyristors is described. The task is to obtain low turn off time with a rate of the reapplied voltage of 400 V/μs. The method combines the gold diffusion with the localized electron irradiation. This is a good compromise to obtain the required limits for both VT and I R (125°C)
  • Keywords
    diffusion; electron beam effects; thyristors; 125 C; Si:Au; electron irradiation; gold diffusion; high power thyristor; recovery; switching time; turn off time; Atomic beams; Charge carrier lifetime; Energy states; Equations; Gold; Impedance; Lattices; Radiative recombination; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-4432-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1998.732377
  • Filename
    732377
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2378176