DocumentCode :
2378176
Title :
Improvement of the recovery characteristics of high power thyristors by selective irradiation
Author :
Banu, Viorel ; Iliescu, Elena ; Niculescu, Anastaw ; Apostolesc, Mihai ; Sturzu, Nicoleta
Author_Institution :
Baneasa SA, Bucharest, Romania
Volume :
1
fYear :
1998
fDate :
6-10 Oct 1998
Firstpage :
285
Abstract :
A method to improve the switching time of the fast high power thyristors is described. The task is to obtain low turn off time with a rate of the reapplied voltage of 400 V/μs. The method combines the gold diffusion with the localized electron irradiation. This is a good compromise to obtain the required limits for both VT and I R (125°C)
Keywords :
diffusion; electron beam effects; thyristors; 125 C; Si:Au; electron irradiation; gold diffusion; high power thyristor; recovery; switching time; turn off time; Atomic beams; Charge carrier lifetime; Energy states; Equations; Gold; Impedance; Lattices; Radiative recombination; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
Type :
conf
DOI :
10.1109/SMICND.1998.732377
Filename :
732377
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2378176
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