DocumentCode
2378592
Title
Nonetchback silicate spin-on glass for advanced BiCMOS technology
Author
Chung, Henry ; Wong, Sam ; Lim, Sheldon
Author_Institution
Signetics Co., Sunnyvale, CA, USA
fYear
1991
fDate
11-12 Jun 1991
Firstpage
376
Lastpage
378
Abstract
Silicate spin-on glass has been successfully used to planarize the contact dielectric and via dielectric in an advanced BiCMOS technology, QUBiC. With SOG planarization, excellent interconnect performance and reliability were achieved. More significantly, the results of this report indicate that SOG can be used very close to the devices without degrading the device performance and reliability
Keywords
BIMOS integrated circuits; VLSI; glass; metallisation; reliability; QUBiC; SOG planarization; VLSI; advanced BiCMOS technology; contact dielectric; double level metallisation; interconnect performance; multilevel interconnection; nonetchback planarization; reliability; silicate spin-on glass; via dielectric; BiCMOS integrated circuits; Bipolar transistors; Dielectric substrates; Etching; Glass; Planarization; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location
Santa Clara, CA
Print_ISBN
0-87942-673-X
Type
conf
DOI
10.1109/VMIC.1991.153030
Filename
153030
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