Two-Dimensional Analytical Model of Hetero Strained Ge/Strained Si TFET

Author

Cui, Ning ; Liang, Renrong ; Wang, Jing ; Xu, Jun

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

2

Abstract

Recently, tunnel Field Effect Transistor (TFET) has attracted lots of attention for the low power application since its potential to obtain a steeper subthreshold slope (SS) than conventional MOSFET. So far, only a few one- and two-dimensional (2D) analytical models [1-2] have been reported. However, among these models, the influence of substrate electric field is not included, and the band-to-band tunneling (BTBT) cannot be simplified to be a 1D physical picture. In this work, we present a 2D analytical model of TFET taking into consideration the nonlocal electric field and energy band profile. Based on this model, a hetero strained germanium/strained silicon TFET (HTFET) on SOI substrates is analyzed. It is shown that the HTFET exhibits superior transfer characteristics than its counterparts.

Keywords

Ge-Si alloys; electric fields; field effect transistors; low-power electronics; semiconductor device models; 1D physical picture; Ge-Si; SOI substrates; band-to-band tunneling; energy band profile; hetero strained TFET; hetero strained germanium/strained silicon TFET; low power application; nonlocal electric field; steeper subthreshold slope; substrate electric field; transfer characteristics; tunnel field effect transistor; two-dimensional analytical model; Analytical models; Electric fields; Electric potential; Logic gates; Numerical simulation; Silicon; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International

Conference_Location

Berkeley, CA

Print_ISBN

978-1-4577-1864-9

Electronic_ISBN

978-1-4577-1863-2

Type

conf

DOI

10.1109/ISTDM.2012.6222412

Filename

6222412