Tensile Strained Ge Layers Obtained via a Si-CMOS Compatible Approach

Author

Capellini, Giovanni ; Kozlowski, Grzegorz ; Yamamoto, Yuji ; Lisker, Marco ; Schroeder, Thomas ; Ghrib, Abdelahmid ; De Kersauson, Malo ; El Kurdi, Moustafa ; Boucaud, Philippe ; Tillack, Bernd

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

2

Abstract

Although rapid advances in Si photonics over the last decade has enabled mass production of higher functionality and lower cost photonic components (such as waveguides, couplers, modulators, photodetectors, etc..) integrated with both digital and analog circuitry in silicon complementary metal oxide semiconductor technology (Si-CMOS), an efficient electrically-pumped light emitter integrated in the Si-CMOS has so far been considered the Holy Grail of the monolithic electronics-photonics integration.

Keywords

CMOS analogue integrated circuits; CMOS digital integrated circuits; elemental semiconductors; integrated optics; monolithic integrated circuits; silicon; CMOS compatible approach; Ge; Holy Grail; Si; analog integrated circuit; complementary metal oxide semiconductor technology; coupler; digital integrated circuit; electrically-pumped light emitter integration; modulator; monolithic electronic-photonic integration; photodetector; photonic component; tensile strained layer; waveguide; Fabrication; Germanium; Photonics; Silicon; Tensile strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International

Conference_Location

Berkeley, CA

Print_ISBN

978-1-4577-1864-9

Electronic_ISBN

978-1-4577-1863-2

Type

conf

DOI

10.1109/ISTDM.2012.6222428

Filename

6222428