Enhancement of Phosphorus Dopant Activation and Diffusion Suppression by Fluorine Co-Implant in Epitaxially Grown Germanium

Author

Jung, Woo-Shik ; Nam, Ju Hyung ; Lin, J. -Y Jason ; Ryu, Seunghwa ; Nainani, Aneesh ; Saraswat, Krishna C.

Author_Institution

Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

2

Abstract

This paper aimed to achieve both higher activation level and less diffusion by passivating the vacancies with fluorine (F) implant. The effect of F on P-doped Ge was also demonstrated. In addition, retardation of diffusion by decreased dopant-vacancy pair was indicated, although further experiments were needed with prolonged annealing time to do more detailed analysis.

Keywords

annealing; chemical vapour deposition; doping profiles; elemental semiconductors; fluorine; germanium; impurity states; passivation; phosphorus; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; surface diffusion; vacancies (crystal); vapour phase epitaxial growth; CVD; Ge:P,F; activation level; annealing; diffusion suppression; dopant-vacancy pair; epitaxially grown germanium; fluorine coimplant; passivation; phosphorus dopant activation; Annealing; Germanium; Implants; Junctions; Passivation; Physics; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International

Conference_Location

Berkeley, CA

Print_ISBN

978-1-4577-1864-9

Electronic_ISBN

978-1-4577-1863-2

Type

conf

DOI

10.1109/ISTDM.2012.6222434

Filename

6222434