DocumentCode :
2379301
Title :
Comparative analysis of NBTI effects on low power and high performance flip-flops
Author :
Ramakrishnan, K. ; Wu, X. ; Vijaykrishnan, N. ; Xie, Y.
Author_Institution :
Dept. of Comput. Sci. & Eng., Pennsylvania State Univ., University Park, PA
fYear :
2008
fDate :
12-15 Oct. 2008
Firstpage :
200
Lastpage :
205
Abstract :
Mitigating the circuit aging effect in digital circuits has become a very important concern for current and future technology nodes. Negative Bias Temperature Instability (NBTI) is one of the most important circuit aging mechanisms, which can incur timing errors. Flip-flops play a vital role as storage elements in pipelined architectures and are prone to effects of aging. NBTI increases the transistor threshold voltage, affecting the performance of the chip. In this paper, we study the effects of NBTI on the timing characteristics of different types of low power and high performance flip-flops. Factors such as input data probability and temperature which affect the degradation rate are also analyzed.
Keywords :
digital circuits; flip-flops; NBTI effects; circuit aging effect mitigation; circuit aging mechanisms; degradation rate; high performance flip-flops; input data probability; negative bias temperature instability; storage elements; timing characteristics; transistor threshold voltage; Aging; Digital circuits; Flip-flops; Negative bias temperature instability; Niobium compounds; Performance analysis; Temperature distribution; Threshold voltage; Timing; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Design, 2008. ICCD 2008. IEEE International Conference on
Conference_Location :
Lake Tahoe, CA
ISSN :
1063-6404
Print_ISBN :
978-1-4244-2657-7
Electronic_ISBN :
1063-6404
Type :
conf
DOI :
10.1109/ICCD.2008.4751862
Filename :
4751862
Link To Document :
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