Title :
Electromigration characteristics of Al/W via contact under unidirectional and bidirectional current conditions
Author :
Tao, Jiang ; Young, K.K. ; Pico, Carey A. ; Cheung, Nathan W. ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Investigates the electromigration performances of selective CVD tungsten filled vias under DC and AC stressing currents. The authors´ results show that the electromigration failure always occurred in metal 2 layer at the via area. The AC lifetimes of the test structure are found to be much longer (more than 1000X) than DC lifetimes under same peak stressing current density. No obvious electromigration induced damage was observed in metal 1 in the test structure we studied
Keywords :
CVD coatings; VLSI; aluminium; electromigration; metallisation; reliability; tungsten; AC lifetimes; AC stressing currents; Al-W; DC lifetimes; DC stressing currents; ULSI; W plug vias; bidirectional current conditions; electromigration failure; electromigration induced damage; electromigration performances; metal 2 layer; multilevel interconnection; peak stressing current density; unidirection current; via area; Circuit testing; Condition monitoring; Current density; Electric resistance; Electromigration; Failure analysis; Heating; Probes; Scanning electron microscopy; Temperature;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.153034
