Test time impact of redundancy repair in embedded flash memory

Summary form only given. Redundancy repair of high-density commodity flash memory is an effective technique to improve per-wafer yield by trading-off increased die size and increased time at wafer-probe for the ATE system to analyze the failing bits and make the necessary repairs. In embedded flash, where densities are typically much lower and test requirements more diverse, the benefit of redundancy repair is less certain. This paper discusses two key aspects of redundancy repair for embedded flash memory blocks.