Theoretical Study of High-speed InGaAs/InP p-i-n Photodiodes for Microwave Generation

Author

Malyshev, Sergei ; Chizh, Alexander ; Vasileuski, Yury

Author_Institution

Inst. of Electronics, Nat. Acad. of Sci. of Belarus, Minsk

fYear

2006

fDate

Oct. 2006

Firstpage

1

Lastpage

4

Abstract

Mixed device/circuit physical model of high-speed p-i-n photodiode, which takes into account self-heating effects and is based on drift-diffusion scheme of charge carrier transport in semiconductor heterostructures and piecewise harmonic balance method has been presented. Based on developed model the design considerations of high-speed high-power surface-illuminated InGaAsP/InP p-i-n photodiode operated at 40 GHz frequency range are provided

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; microwave generation; microwave photonics; p-i-n photodiodes; semiconductor device models; 40 GHz; InGaAs-InP; charge carrier transport; drift-diffusion scheme; high-power surface-illuminated photodiode; high-speed p-i-n photodiodes; microwave generation; mixed device-circuit physical model; piecewise harmonic balance method; self-heating effects; semiconductor heterostructures; Electromagnetic heating; Indium gallium arsenide; Indium phosphide; Microwave circuits; Microwave devices; Microwave generation; PIN photodiodes; Poisson equations; Solid modeling; Temperature; microwave oscillators; p-i-n photodiodes; semiconductor device modeling; semiconductor device thermal factors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 2006. MWP '06. International Topical Meeting on

Conference_Location

Grenoble

Print_ISBN

1-4244-0203-4

Electronic_ISBN

1-4244-0204-2

Type

conf

DOI

10.1109/MWP.2006.346564

Filename

4153787