DocumentCode :
2379531
Title :
(NH4)2S Passivation for High Mobility Germanium-Tin (GeSn) p-MOSFETs
Author :
Wang, Lanxiang ; Su, Shaojian ; Wang, Wei ; Gong, Xiao ; Yang, Yue ; Guo, Pengfei ; Zhang, Guangze ; Xue, Chunlai ; Cheng, Buwen ; Han, Genquan ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
fYear :
2012
fDate :
4-6 June 2012
Firstpage :
1
Lastpage :
2
Abstract :
High mobility Ge0.958Sn0.042 p-MOSFETs with pre-gate (NH4)2S passivation showed decent transfer and output characteristics. Ge0.958Sn0.042 p-MOSFETs demonstrated here have a higher peak mobility in comparison with those of other GeSn p-MOSFETs reported. However, the mobility at high inversion charge density is still lower than that of Si2H6 passivated GeSn p-MOSFETs, and further investigation is needed.
Keywords :
MOSFET; germanium compounds; nitrogen compounds; passivation; (NH4)2S; GeSn; high inversion charge density; high mobility germanium-tin p-MOSFET; passivation; Films; Logic gates; MOSFET circuits; Passivation; Surface cleaning; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
Type :
conf
DOI :
10.1109/ISTDM.2012.6222449
Filename :
6222449
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2379531
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