DocumentCode
2379540
Title
Sputtered TiN performance as an anti-reflective coating in backend sub-um i-line lithography process
Author
Chen, S. ; Chen, C.L. ; Tsou, Samuel
Author_Institution
Process Dev. Dept., Winbond Electron. Corp., Hsinchu, Taiwan
fYear
1991
fDate
11-12 Jun 1991
Firstpage
393
Lastpage
395
Abstract
With scaling, the need for reliable metal interconnect is growing rapidly to prevent the electromigration failure. One of the major factors that influence EM failure is the notched metal line which stems from reflective notching in photo processing. This work presents the use of TiN as an ARC layer in sub-μm process which has achieved a production worthy status
Keywords
VLSI; aluminium; antireflection coatings; electromigration; metallisation; photolithography; reliability; sputtered coatings; titanium compounds; 365 nm; ARC layer; TiN; ULSI; UV lithography; anti-reflective coating; backend processing; electromigration prevention; i-line lithography process; multilevel interconnection; notched metal line; photo processing; production worthy status; reflective notching; reliable metal interconnect; sub-μm process; submicron lithography; Coatings; Etching; Geometry; Lithography; Polymers; Reflectivity; Resists; Strips; Surface topography; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location
Santa Clara, CA
Print_ISBN
0-87942-673-X
Type
conf
DOI
10.1109/VMIC.1991.153035
Filename
153035
Link To Document