Monte Carlo Simulations of Ge Implant Free Quantum Well FETs - The Role of Substrate and Channel Orientation

Author

Chan, Kah Hou ; Riddet, Craig ; Watling, Jeremy R. ; Asenov, Asen

Author_Institution

Device Modelling Group, Univ. of Glasgow, Glasgow, UK

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

2

Abstract

Previous simulation studies of a 20nm gate length IFQW device have considered the impact of the spacer separating the gate from the raised source and drain regions. In this work the study is extended to consider how interface roughness from the gate stack, the introduction of biaxial compressive strain from a Si_0.2Ge_0.8 substrate and transition to a (110) surface orientation from the standard (001) can influence performance in terms of low field mobility and on current. Full band Monte Carlo transport simulations are used, with a 6 band k.p bandstructure and scattering from inelastic acoustic (IAP), optical (IOP) and SO phonons, ionized impurities and surface roughness (SR), calibrated to experimental data.

Keywords

Monte Carlo methods; band structure; field effect transistors; germanium; phonons; semiconductor quantum wells; silicon compounds; FET; Ge; Ge implant free quantum well; IAP phonons; IFQW device; IOP phonons; Monte Carlo transport simulation; SO phonons; Si_0.2O_0.8; band structure; biaxial compressive strain; channel orientation; gate stack; inelastic acoustic phonons; interface roughness; ionized impurities; low field mobility; optical phonons; substrate; surface orientation; Implants; Logic gates; Monte Carlo methods; Scattering; Strain; Strontium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International

Conference_Location

Berkeley, CA

Print_ISBN

978-1-4577-1864-9

Electronic_ISBN

978-1-4577-1863-2

Type

conf

DOI

10.1109/ISTDM.2012.6222450

Filename

6222450