Ultra-High Hall Mobility (1 x 106 cm2V-1S-1) in a Two-Dimensional Hole Gas in a Strained Germanium Quantum Well Grown by Reduced Pressure CVD

Author

Dobbie, Andy ; Myronov, Maksym ; Morris, Richard J.H. ; Prest, Martin J. ; Richardson-Bullock, James S. ; Hassan, Amna H A H ; Shah, Vishal A. ; Parker, Evan H.C. ; Whall, Terry E. ; Leadley, David R.

Author_Institution

Dept. of Phys., Univ. of Warwick, Coventry, UK

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

2

Abstract

In this work, a hole mobility of one million in germanium is reported. This extremely high value of 1.1 x 106 cm2V-1s-1 at a carrier sheet density of 3.0 x 10¹¹ cm^-2 is observed in a strained Ge quantum well structure grown by reduced-pressure chemical vapor deposition (RP-CVD) and is nearly an order of magnitude higher than previously reported values.

Keywords

Hall mobility; chemical vapour deposition; elemental semiconductors; germanium; hole density; hole mobility; semiconductor quantum wells; two-dimensional hole gas; 2D hole gas; Ge; RPCVD; carrier sheet density; hole mobility; reduced-pressure chemical vapor deposition; strained germanium quantum well structure; ultrahigh Hall mobility; Chemical vapor deposition; Hall effect; Lead; Physics; Plasma temperature; Silicon germanium; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International

Conference_Location

Berkeley, CA

Print_ISBN

978-1-4577-1864-9

Electronic_ISBN

978-1-4577-1863-2

Type

conf

DOI

10.1109/ISTDM.2012.6222451

Filename

6222451