DocumentCode :
2379641
Title :
Morphology Evolution of Epitaxial SiGe in Patterns
Author :
Seiss, Birgit ; Dutartre, Didier
Author_Institution :
STMicroelectron., Crolles, France
fYear :
2012
fDate :
4-6 June 2012
Firstpage :
1
Lastpage :
2
Abstract :
In these experiments 19 nm of Si0.73Ge0.27 (SiGe) have been deposited by CVD on patterned (001) Si wafers. The patterns are oriented either along <;100>; or along <;110>; directions in order to obtain information on anisotropic effects.The epitaxial SiGe has been annealed one minute under H2 atmosphere at 750°C, and the morphology has been characterized mainly by SEM, TEM and AFM.
Keywords :
Ge-Si alloys; annealing; atomic force microscopy; chemical vapour deposition; crystal morphology; scanning electron microscopy; semiconductor growth; semiconductor materials; transmission electron microscopy; (100) directions; (110) directions; AFM; CVD deposition; H2 atmosphere; SEM; Si; SiGe; TEM; anisotropic effects; annealing; epitaxial patterns; morphology evolution; patterned (001) Si wafers; size 19 nm; temperature 750 degC; time 1 min; Anisotropic magnetoresistance; Annealing; Epitaxial growth; Morphology; Silicon; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
Type :
conf
DOI :
10.1109/ISTDM.2012.6222455
Filename :
6222455
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2379641
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