DocumentCode
2379716
Title
Effect of nitrogen containing underlayers on aluminum electromigration
Author
Jain, Vivek ; Pramanik, Dipankar
Author_Institution
VLSI Technol. Inc., San Jose, CA, USA
fYear
1991
fDate
11-12 Jun 1991
Firstpage
396
Lastpage
398
Abstract
Electromigration performance of Al-1% Cu films deposited on TiW underlayer have been studied. Role of nitrogen impurity in the underlying TiW film on electromigration has been investigated. The study shows that increasing nitrogen content in the underlayer results in worse electromigration performance
Keywords
VLSI; aluminium alloys; copper alloys; electromigration; metallisation; nitrogen; titanium compounds; Al-Cu metallisation; AlCu-TiW:N; TiW underlayer; VLSI; electromigration performance; multilevel interconnection; role of impurities; Aluminum; Annealing; Conducting materials; Current density; Electromigration; Impurities; Nitrogen; Optical films; Temperature; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location
Santa Clara, CA
Print_ISBN
0-87942-673-X
Type
conf
DOI
10.1109/VMIC.1991.153036
Filename
153036
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