• DocumentCode
    2379763
  • Title

    SiGe Nanoring Formation

  • Author

    Tu, Wen-Hsien ; Huang, S.-H. ; Liu, C.W.

  • Author_Institution
    Grad. Inst. of Electron. Eng. & Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The SiGe quantum dots and nanorings are grown at 500°C by UHVCVD. TEM images show the grown quantum dots with epi-Si layer from SiH4/H2 and SiH4/He, respectively. The epi-Si deposited by SiH4 and H2 cannot cap the quantum dots, but SiH4 and He can form the Si cap.
  • Keywords
    chemical vapour deposition; germanium alloys; molecular beam epitaxial growth; nanofabrication; nanostructured materials; semiconductor growth; semiconductor materials; semiconductor quantum dots; silicon alloys; transmission electron microscopy; vacuum deposition; SiGe; SiGe nanoring formation; TEM images; UHVCVD; epi-Si layer deposition; quantum dot growth; temperature 500 degC; Annealing; Educational institutions; Electrical engineering; Helium; Quantum dots; Silicon; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    978-1-4577-1864-9
  • Electronic_ISBN
    978-1-4577-1863-2
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222463
  • Filename
    6222463
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2379763