Strained High Percentage (60%) Boron Doped Silicon-Germanium Alloys - Strain, Dopant Substitionality, Carrier Concentration, Resistivity, and Microstructure Development

Author

Reznicek, Alexander ; Adam, Thomas N. ; Hovel, Harold ; De Souza, Joel ; Zhu, Zhengmao ; Li, Jinghong ; Bedell, Stephen W. ; Paruchuri, Vamsi ; Sadana, Devendra K.

Author_Institution

IBM Thomas J Watson Res. Center, Yorktown Heights, NY, USA

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

2

Abstract

In this work we study the incorporation of boron into fully strained high percentage (60%) boron doped Silicon-Germanium (SiGe). We will discuss the epitaxial growth, dopant incorporation, and strain compensation due to the dopant atoms, defect generation in highly strained doped SiGe layers as well as dopant activation, free carrier concentration and mobilities. We will look at band structure effects due to high doping in strained SiGe layers.

Keywords

Ge-Si alloys; band structure; boron; carrier mobility; crystal microstructure; epitaxial growth; semiconductor growth; semiconductor materials; SiGe:B; band structure effects; boron doped silicon-germanium alloys; carrier concentration; defect generation; dopant activation; dopant atoms; dopant substitionality; epitaxial growth; microstructure development; strain compensation; Boron; Doping; Epitaxial growth; Microstructure; Silicon germanium; Strain; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International

Conference_Location

Berkeley, CA

Print_ISBN

978-1-4577-1864-9

Electronic_ISBN

978-1-4577-1863-2

Type

conf

DOI

10.1109/ISTDM.2012.6222468

Filename

6222468