Title :
Benchmarking of Novel Contact Architectures on Silicon and Germanium
Author :
Ahmed, Khaled ; Chopra, Saurabh ; Agrawal, Ashish ; Datta, Suman
Author_Institution :
Appl. Mater., Inc., Sunnyvale, CA, USA
Abstract :
Novel contact architectures to n-Silicon (n-Si) and to n-Germanium (n-Ge) were benchmarked for the first time against the state-of-the-art contact architecture to n-Si. It was found that although the recently reported contact architectures to n-Ge exhibit markedly improved performance, more work must be done to match state-of the-art NiSi/n-Si contact architecture in terms of current-carrying capability.
Keywords :
contact resistance; electrical contacts; elemental semiconductors; germanium; silicon; Ge; Si; contact architecture; current-carrying capability; Benchmark testing; CMOS integrated circuits; Contact resistance; Germanium; Neodymium; Resistance;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222471