• DocumentCode
    2379960
  • Title

    Metal-Insulator-Semiconductor Contacts on Ge: Physics and Applications

  • Author

    Lin, J. -Y Jason ; Roy, Arunanshu M. ; Sun, Yun ; Saraswat, Krishna C.

  • Author_Institution
    Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We achieve a 70× reduction in ρc to 1.28×10-6Ωcm2 using MIS contacts with TiO2. The effectiveness of this method is understood in terms of ΦBN, band offsets, and the metal/TiO2 interface. Finally, TiO2 MIS contacts were integrated on Ge N-MOSFETs.
  • Keywords
    MIS structures; MOSFET; elemental semiconductors; germanium; titanium compounds; Ge; MIS contacts; N-MOSFET; TiO2; band offsets; metal-insulator-semiconductor contacts; Aluminum oxide; Contact resistance; Logic gates; MOSFET circuits; Resistance; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    978-1-4577-1864-9
  • Electronic_ISBN
    978-1-4577-1863-2
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222473
  • Filename
    6222473
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2379960