Ge/SiGe Multiple Quantum Well Optoelectronic Devices for Silicon Photonics

Despite being an indirect-gap semiconductor, Ge quantum wells (QWs) have demonstrated, based on its direct gap transition, a QCSE as strong as that of direct-gap III-V semiconductor QWs. In this context, this paper presents our latest experimental results on the light modulation, detection, and emission behaviors of Ge/SiGe MQWs within the telecommunication wavelength region. From the experiments, DC and RF characteristics of Ge/SiGe MQW waveguide p-i-n diode embedded in a coplanar electrode will be reported. The behaviors of room temperature (RT) electroluminescence (EL) of its direct-gap transition are studied at different current injections and around Si chip temperatures of 20°C to 70°C.