Title :
Optical Properties of Ge1-xSnx Epitaxial Layers with Very High Sn Contents
Author :
Nakamura, M. ; Shimura, Y. ; Takeuchi, W. ; Taoka, N. ; Nakatsuka, O. ; Zaima, S.
Author_Institution :
Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
Abstract :
This paper measured the direct band gap of Ge1-xSnx epitaxial layers with a very high Sn content over 15%, and showed the Sn content dependence of the bowing parameter for the direct gap. The bowing parameter for Ge1-xSnx epitaxial layers were determined to be b = -4.77 x + 2.47 (eV).
Keywords :
Fourier transform spectra; energy gap; germanium compounds; infrared spectra; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; Fourier transform infrared spectroscopy; Ge1-xSnx; bowing parameter; direct band gap; epitaxial layers; group IV semiconductor material; molecular beam epitaxy system; optical properties; Atomic layer deposition; Epitaxial layers; Indium phosphide; Substrates; Temperature measurement; Tin;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222476
