Title :
Room-Temperature Electroluminescence from Tensile Strained Double-Heterojunction Ge Pin LEDs on Si Substrates
Author :
Kaschel, Mathias ; Schmid, Marc ; Gollhofer, Martin ; Werner, Jens ; Oehme, Michael ; Schulze, Jörg
Author_Institution :
Inst. of Semicond. Eng., Univ. of Stuttgart, Stuttgart, Germany
Abstract :
A series of double-heterojunction tensile strained Ge pin LEDs on Si substrates have been successfully grown and processed. The effect of the strain and the thickness of the intrinsic layer on the direct band gap is evaluated using electroluminescence measurements.
Keywords :
electroluminescence; elemental semiconductors; energy gap; germanium; integrated optoelectronics; light emitting diodes; p-i-n diodes; Ge; Si; Si substrates; direct band gap; intrinsic layer thickness; room-temperature electroluminescence; strain effects; temperature 293 K to 298 K; tensile strained double-heterojunction pin LED; Current density; Electroluminescence; Light emitting diodes; Photonic band gap; Silicon; Substrates; Temperature measurement;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222478
