Title :
Reabsorption Effects of Direct Band Emission of Ge
Author :
Chen, Y.Y. ; Nien, Y.H. ; Chi, Y.H. ; Liu, C.W.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
In this work, the reabsorption is systematically studied by thinning the Ge wafer from 500 μm to 1 μm. The lifetime of bulk Ge substrate can also be extracted using thickness dependent photoluminescence.
Keywords :
absorption coefficients; elemental semiconductors; germanium; photoluminescence; Si; bulk substrate; direct band emission; photoluminescence spectra; reabsorption effects; Educational institutions; Epitaxial growth; Photonic band gap; Photonics; Plasma temperature; Silicon; Surface fitting;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222479
