Theoretical analysis of EUV spectrum of Xe and Sn

Author

Sasaki, Akira

Author_Institution

Adv. Photon Res. Center, Japan Atomic Energy Res. Inst., Kyoto, Japan

Volume

1

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

295

Abstract

Emission in the extreme ultraviolet (EUV) wavelength from Xe and Sn plasmas pumped by either laser irradiation (LPP) or discharge (DPP) has been studied toward its application to semiconductor technology. In this paper, identification of emission lines and analysis of spectral profile are presented, based on the atomic structure and rate coefficient calculation using HULLAC, and atomic process simulation using the whiam collisional radiative (CR) model.

Keywords

discharges (electric); optical pumping; plasma density; plasma production by laser; plasma simulation; spectral line breadth; tin; ultraviolet lithography; ultraviolet sources; ultraviolet spectra; xenon; EUV spectrum; HULLAC; Sn; Sn plasma; Xe; Xe plasma; atomic process simulation; atomic structure; discharge produced plasma; emission lines; extreme ultraviolet wavelength emission; laser irradiation; laser produced plasma; optical pumping; rate coefficient calculation; spectral profile; whiam collisional radiative model; Atomic beams; Atomic measurements; Laser excitation; Laser modes; Laser theory; Plasma applications; Plasma simulation; Plasma waves; Tin; Ultraviolet sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1251754

Filename

1251754