DocumentCode
2380108
Title
High frequency class E power amplifier
Author
Hristov, M. ; Dodeva, G. ; Antonova, O. ; Roussel, A.
Author_Institution
ECAD Lab., Tech. Univ. of Sofia, Bulgaria
Volume
3
fYear
2002
fDate
2002
Firstpage
48
Abstract
A monolithic RF power amplifier has been designed to provide 10 dBm output power at 1GHz to a 50 ohm load from 2.8 V supply. The amplifier has been developed first at 5 MHz and then at 1GHz. 0.8 μm SiGe BiCMOS and 0.35 μm Si CMOS technologies are used. Monolithic inductors are implemented for the power amplifier investigation at high frequencies.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; elemental semiconductors; inductors; power amplifiers; silicon; 0.35 micron; 0.8 micron; 1 GHz; 2.8 V; 5 MHz; 50 ohm; Si; Si CMOS technology; SiGe; SiGe BiCMOS technology; high frequency class E power amplifier; monolithic RF power amplifier; monolithic inductors; output power; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; High power amplifiers; Inductors; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Intelligent Systems, 2002. Proceedings. 2002 First International IEEE Symposium
Print_ISBN
0-7803-7134-8
Type
conf
DOI
10.1109/IS.2002.1042585
Filename
1042585
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