Title :
High frequency class E power amplifier
Author :
Hristov, M. ; Dodeva, G. ; Antonova, O. ; Roussel, A.
Author_Institution :
ECAD Lab., Tech. Univ. of Sofia, Bulgaria
Abstract :
A monolithic RF power amplifier has been designed to provide 10 dBm output power at 1GHz to a 50 ohm load from 2.8 V supply. The amplifier has been developed first at 5 MHz and then at 1GHz. 0.8 μm SiGe BiCMOS and 0.35 μm Si CMOS technologies are used. Monolithic inductors are implemented for the power amplifier investigation at high frequencies.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; elemental semiconductors; inductors; power amplifiers; silicon; 0.35 micron; 0.8 micron; 1 GHz; 2.8 V; 5 MHz; 50 ohm; Si; Si CMOS technology; SiGe; SiGe BiCMOS technology; high frequency class E power amplifier; monolithic RF power amplifier; monolithic inductors; output power; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; High power amplifiers; Inductors; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon germanium;
Conference_Titel :
Intelligent Systems, 2002. Proceedings. 2002 First International IEEE Symposium
Print_ISBN :
0-7803-7134-8
DOI :
10.1109/IS.2002.1042585
