DocumentCode :
2380169
Title :
Material Properties and Applications of Ge1-xSnx Alloys for Ge Nanoelectronics
Author :
Nakatsuka, Osamu ; Shimura, Yosuke ; Takeuchi, Wakana ; Taoka, Noriyuki ; Zaima, Shigeaki
Author_Institution :
Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
fYear :
2012
fDate :
4-6 June 2012
Firstpage :
1
Lastpage :
2
Abstract :
In summary, Ge1-xSnx alloy provides a new aspect into the growth, strain, electronic, and energy band engineering technology. The future prospect of Ge1-xSnx application is very exciting and promising for not only electronic but also optoelectronic applications.
Keywords :
band structure; germanium alloys; nanoelectronics; Ge nanoelectronics; Ge1-xSnx; energy band engineering technolog; optoelectronic application; Atomic layer deposition; Epitaxial layers; Strain; Substrates; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
Type :
conf
DOI :
10.1109/ISTDM.2012.6222485
Filename :
6222485
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2380169
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