• DocumentCode
    2380213
  • Title

    The SiGeSn Approach Towards Si-Based Lasers

  • Author

    Sun, Greg

  • Author_Institution
    Dept. of Phys., Univ. of Massachusetts, Boston, MA, USA
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This talk presents design and simulation results on Si-based lasers with either band-to-band or intersubband approach within the group IV system.
  • Keywords
    germanium compounds; quantum well lasers; silicon compounds; Si-based Lasers; SiGeSn; band-to-band approach; group-IV system; intersubband approach; laser design; Electroluminescence; Metals; Quantum cascade lasers; Silicon; Silicon germanium; Sun;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    978-1-4577-1864-9
  • Electronic_ISBN
    978-1-4577-1863-2
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222487
  • Filename
    6222487
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2380213