Title :
The SiGeSn Approach Towards Si-Based Lasers
Author_Institution :
Dept. of Phys., Univ. of Massachusetts, Boston, MA, USA
Abstract :
This talk presents design and simulation results on Si-based lasers with either band-to-band or intersubband approach within the group IV system.
Keywords :
germanium compounds; quantum well lasers; silicon compounds; Si-based Lasers; SiGeSn; band-to-band approach; group-IV system; intersubband approach; laser design; Electroluminescence; Metals; Quantum cascade lasers; Silicon; Silicon germanium; Sun;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222487
