1.3 GHz power amplifier design using a measurement-based transistor package model

This paper concerns the design of a 1.3 GHz class-A power amplifier based on a packaged gallium arsenide transistor. Special on wafer probes and calibration substrate were designed and fabricated, in order to measure the transistor DC-characteristics and S-parameters up to 2.7 GHz. Basing on the collected data, transistor nonlinear DC-current-source model and linear package-parasitic-network model were developed. The developed measurement-based model was used to design a class-A power amplifier. Measurements performed on the fabricated device proved the effectiveness of the presented approach.