• DocumentCode
    2380230
  • Title

    Strain Control of Si and Si1-yCy Layers in Si/Si1-yCy/Si(100) Heterostructures

  • Author

    Kikuchi, Tomohira ; Sakuraba, Masao ; Costina, Ioan ; Tillack, Bernd ; Murota, Junichi

  • Author_Institution
    Lab. for Nanoelectron. & Spintronics, Tohoku Univ., Sendai, Japan
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper demonstrated that lattice constant and Raman shifts of Si-Si and Si-C modes of Si1-yCy are normalized by C fraction obtained from XPS C1s peak at 283.3 eV that is substitutional C fraction. By stripe-shape patterning of the Si(10 nm)/Si0.98C0.02(20-60 nm)/Si(100) heterostructure, compressive-strained Si cap layer was realized.
  • Keywords
    Raman spectra; X-ray photoelectron spectra; compressibility; compressive strength; elemental semiconductors; lattice constants; semiconductor epitaxial layers; silicon; silicon compounds; wide band gap semiconductors; Raman shifts; Si-Si1-yCy-Si; Si-Si1-yCy-Si(100) heterostructures; XPS C1s peak; compressive-strained Si cap layer; electron volt energy 283.3 eV; lattice constant; size 10 nm to 60 nm; strain control; stripe-shape patterning; substitutional C fraction; Conductivity; Lattices; Raman scattering; Silicon; Strain; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    978-1-4577-1864-9
  • Electronic_ISBN
    978-1-4577-1863-2
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222488
  • Filename
    6222488
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2380230