Title :
Strain Control of Si and Si1-yCy Layers in Si/Si1-yCy/Si(100) Heterostructures
Author :
Kikuchi, Tomohira ; Sakuraba, Masao ; Costina, Ioan ; Tillack, Bernd ; Murota, Junichi
Author_Institution :
Lab. for Nanoelectron. & Spintronics, Tohoku Univ., Sendai, Japan
Abstract :
This paper demonstrated that lattice constant and Raman shifts of Si-Si and Si-C modes of Si1-yCy are normalized by C fraction obtained from XPS C1s peak at 283.3 eV that is substitutional C fraction. By stripe-shape patterning of the Si(10 nm)/Si0.98C0.02(20-60 nm)/Si(100) heterostructure, compressive-strained Si cap layer was realized.
Keywords :
Raman spectra; X-ray photoelectron spectra; compressibility; compressive strength; elemental semiconductors; lattice constants; semiconductor epitaxial layers; silicon; silicon compounds; wide band gap semiconductors; Raman shifts; Si-Si1-yCy-Si; Si-Si1-yCy-Si(100) heterostructures; XPS C1s peak; compressive-strained Si cap layer; electron volt energy 283.3 eV; lattice constant; size 10 nm to 60 nm; strain control; stripe-shape patterning; substitutional C fraction; Conductivity; Lattices; Raman scattering; Silicon; Strain; Temperature measurement;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222488
