DocumentCode
2380232
Title
Power switch characterization for fine-grained dynamic voltage scaling
Author
Di, Liang ; Putic, Mateja ; Lach, John ; Calhoun, Benton H.
Author_Institution
Intel Corp., Santa Clara, CA
fYear
2008
fDate
12-15 Oct. 2008
Firstpage
605
Lastpage
611
Abstract
Dynamic voltage scaling (DVS) provides power savings for systems with varying performance requirements. One low overhead implementation of DVS uses PMOS power switches to connect DVS blocks to one of the available VDD supplies. While power switches have been analyzed extensively for leakage power gating, proper design of power switches for DVS is less well understood. This paper characterizes power switches for DVS in terms of VDD-switching delay and VDD-switching energy. We show the impact of these switching overheads on a novel fine-grained DVS architecture and present an RC model that allows fast estimation of the overhead. Measurements of a DVS multiplier and adder on a 90 nm CMOS test chip validate the model. Our model and measurements confirm that power switched DVS can provide sufficiently low overhead to give energy savings with only one clock cycle spent at a lower voltage, making this approach a flexible and enticing option for embedded portable systems.
Keywords
CMOS integrated circuits; adders; field effect transistor switches; multiplying circuits; CMOS test chip; PMOS power switches; RC model; dynamic voltage scaling; leakage power gating; size 90 nm; switching delay; switching overhead; Clocks; Delay; Dynamic voltage scaling; Energy measurement; Power measurement; Power system modeling; Semiconductor device measurement; Semiconductor device modeling; Testing; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer Design, 2008. ICCD 2008. IEEE International Conference on
Conference_Location
Lake Tahoe, CA
ISSN
1063-6404
Print_ISBN
978-1-4244-2657-7
Electronic_ISBN
1063-6404
Type
conf
DOI
10.1109/ICCD.2008.4751923
Filename
4751923
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