Efficient Si3H8 Based Deposition Process Suitable for High Throughput Cl2 Based SiCP/SiP Cyclic Deposition and Etch Processes

In this paper, an efficient Si₃H₈, (SiH₃CH₃, and PH₃) based deposition process that can be combined with a Cl₂ based selective chemical vapor etch process is demonstrated . Various options for Cl₂ based SiCP/SiP processes have been discussed and demonstrated. The most efficient processes are isothermal and isobaric, since temperature or pressure changes add processing time, introduce complexity and potential instabilities. Therefore, in order to maximize process efficiency and stability, the aim is to compose isothermal and isobaric process recipes. Despite the low processing temperature, high growth rates are obtained. Low processing temperature and high growth rate allow high [C] and [P] concentrations. It has been shown that periodic etching as applied in a CDE process does substantially enhance epitaxial layer quality.