DocumentCode
238026
Title
A 2-watt, 0.15-µm GaAs pHEMT stacked amplifier at 22 GHz
Author
Fersch, Thomas ; Weigel, Robert ; Quaglia, R. ; Pirola, Marco ; Ghione, G. ; Camarchia, Vittorio
Author_Institution
Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany
fYear
2014
fDate
16-18 June 2014
Firstpage
1
Lastpage
4
Abstract
This paper presents a 33 dBm, 3-stage stacked GaAs pHEMT power amplifier at 22GHz with on-chip matching networks. The circuit topology is explained, and interstage matching techniques are simulated to investigate their aptitude to achieve interstage matching for the individual transistors. Special care was put on the design of a very compact layout with on-chip matching networks. Simulation results are presented and the stacking benefits are outlined.
Keywords
HEMT integrated circuits; field effect MMIC; impedance matching; microwave power amplifiers; GaAs; frequency 22 GHz; onchip matching network; pHEMT stacked amplifier; power 2 W; power amplifier; size 0.15 mum; Capacitors; Degradation; Impedance matching; Logic gates; PHEMTs; Reliability; Resistors; Gallium arsenide; high efficiency; point-to-point radio; power amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwaves, Radar, and Wireless Communication (MIKON), 2014 20th International Conference on
Conference_Location
Gdansk
Print_ISBN
978-617-607-553-0
Type
conf
DOI
10.1109/MIKON.2014.6899880
Filename
6899880
Link To Document