DocumentCode :
2380279
Title :
Run-time Active Leakage Reduction by power gating and reverse body biasing: An eNERGY vIEW
Author :
Xu, Hao ; Vemuri, Ranga ; Wen-Ben Jone
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Cincinnati, Cincinnati, OH
fYear :
2008
fDate :
12-15 Oct. 2008
Firstpage :
618
Lastpage :
625
Abstract :
Run-time active leakage reduction (RALR) is a recent technique and aims at aggressively reducing leakage power consumption. This paper studies the feasibility of RALR from the energy aspect, for both power gating (PG) and reverse body bias (RBB) implementations.We develop two energy saving models for PG and RBB, respectively. These models can accurately estimate the circuit energy saving at any time, even when the circuit is in state transition. In PG modeling, we discover a physical phenomenon called ldquoinstant savingrdquo, which can affect the model accuracy by 30%-50%. Based on the RBB model, we derive the optimum design point of RBB for RALR. Finally in terms of energy saving, we define four figures-of-merit, to compare the efficacy of using PG and RBB to implement RALR.
Keywords :
MOSFET; power consumption; MOSFET; circuit energy saving; figures-of-merit; leakage power consumption; power gating; reverse body biasing; run-time active leakage reduction; Capacitance; Energy consumption; Gate leakage; Leakage current; Runtime; State estimation; Subthreshold current; Switches; Switching circuits; Tuned circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Design, 2008. ICCD 2008. IEEE International Conference on
Conference_Location :
Lake Tahoe, CA
ISSN :
1063-6404
Print_ISBN :
978-1-4244-2657-7
Electronic_ISBN :
1063-6404
Type :
conf
DOI :
10.1109/ICCD.2008.4751925
Filename :
4751925
Link To Document :
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