Title :
Investigation on dual gate oxide charging damage in 0.13μm copper damascene technology
Author :
Teo, W.Y. ; Hou, Y.T. ; Li, M.-F. ; Chen, P. ; Ko, L.H. ; Zeng, X. ; Jin, Y. ; Gn, F.H. ; Chan, L.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
The plasma charging damage in 0.13 μm dual gate oxide Cu-damascene process is studied here. It was found in our experiments that the leaky feature of 20Å (EOT) gate oxide makes thin gate oxide only susceptible to charging damage from high density plasma inter-layer dielectric (HDP ILD) deposition. However, application of PETEOS IMD deposition leads to obvious charging damage to the thick gate oxide.
Keywords :
dielectric thin films; integrated circuit interconnections; leakage currents; plasma deposition; silicon compounds; surface treatment; 0.13 micron; 20 A; Cu; Cu dual damascene process; PETEOS IMD deposition; SiO2; antenna structures; dual gate oxide charging damage; effective oxide thickness; gate oxide thickness; high density plasma inter-layer dielectric deposition; initial gate leakage measurements; Antenna measurements; Copper; Diodes; Gate leakage; MOS devices; Plasma devices; Plasma measurements; Protection; Testing; Thickness measurement;
Conference_Titel :
Plasma- and Process-Induced Damage, 2002 7th International Symposium on
Print_ISBN :
0-9651577-7-6
DOI :
10.1109/PPID.2002.1042598
