• DocumentCode
    2380368
  • Title

    The Effect of Dose of H and He Sequential Implantation in Germanium

  • Author

    Dai, J.Y. ; Jiang, H.T. ; Di, Z.F. ; Zhang, M.

  • Author_Institution
    State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, we present a systematic study on the ion fluence dependence on blistering phenomenon of H and He sequentially implanted Germanium, and the underlying mechanisms has been interpreted based on the experimental results.
  • Keywords
    elemental semiconductors; germanium; helium; hydrogen; ion implantation; blistering phenomenon; dose effect; ion fluence dependence; sequential implantation; Annealing; Germanium; Helium; Hydrogen; Ions; Strain; Surface morphology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    978-1-4577-1864-9
  • Electronic_ISBN
    978-1-4577-1863-2
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222495
  • Filename
    6222495
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2380368