Title :
The Effect of Dose of H and He Sequential Implantation in Germanium
Author :
Dai, J.Y. ; Jiang, H.T. ; Di, Z.F. ; Zhang, M.
Author_Institution :
State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
Abstract :
In this work, we present a systematic study on the ion fluence dependence on blistering phenomenon of H and He sequentially implanted Germanium, and the underlying mechanisms has been interpreted based on the experimental results.
Keywords :
elemental semiconductors; germanium; helium; hydrogen; ion implantation; blistering phenomenon; dose effect; ion fluence dependence; sequential implantation; Annealing; Germanium; Helium; Hydrogen; Ions; Strain; Surface morphology;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222495
