Highly-Crystallized Ge:H Film Growth from GeH4 VHF-ICP - Crystalline Nucleation Initiated by Ni-Nanodots

Author

Makihara, Katsunori ; Gao, Jin ; Sakaike, Kouhei ; Hayashi, Syohei ; Deki, Hidenori ; Ikeda, Mitsuhisa ; Higashi, Seiichiro ; Miyazaki, Seiichi

Author_Institution

Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

2

Abstract

This paper demonstrated that an introduction of the Ni-nanodots with an areal dot density as high as ~10¹¹ cm^-2 induced by VHF-ICP H₂-plasma exposure just before VHF-ICP of 10 % GeH₄ deposition is quite effective to enhance Ge crystalline nucleation and subsequent formation of highly-crystallized Ge network at a rate as high as ~15 nm/sec.

Keywords

crystallisation; elemental semiconductors; germanium; high-frequency effects; hydrogen; nucleation; plasma deposition; semiconductor growth; semiconductor thin films; Ge:H; GeH₄ deposition; H₂-plasma exposure; Ni-nanodots; SiO₂-Ni; areal dot density; crystalline nucleation; high frequency plasma deposition; highly-crystallized Ge:H film growth; inductively-coupled plasma deposition; Films; Nickel; Plasma temperature; Raman scattering; Substrates; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International

Conference_Location

Berkeley, CA

Print_ISBN

978-1-4577-1864-9

Electronic_ISBN

978-1-4577-1863-2

Type

conf

DOI

10.1109/ISTDM.2012.6222497

Filename

6222497