Title :
Highly-Crystallized Ge:H Film Growth from GeH4 VHF-ICP - Crystalline Nucleation Initiated by Ni-Nanodots
Author :
Makihara, Katsunori ; Gao, Jin ; Sakaike, Kouhei ; Hayashi, Syohei ; Deki, Hidenori ; Ikeda, Mitsuhisa ; Higashi, Seiichiro ; Miyazaki, Seiichi
Author_Institution :
Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
Abstract :
This paper demonstrated that an introduction of the Ni-nanodots with an areal dot density as high as ~1011 cm-2 induced by VHF-ICP H2-plasma exposure just before VHF-ICP of 10 % GeH4 deposition is quite effective to enhance Ge crystalline nucleation and subsequent formation of highly-crystallized Ge network at a rate as high as ~15 nm/sec.
Keywords :
crystallisation; elemental semiconductors; germanium; high-frequency effects; hydrogen; nucleation; plasma deposition; semiconductor growth; semiconductor thin films; Ge:H; GeH4 deposition; H2-plasma exposure; Ni-nanodots; SiO2-Ni; areal dot density; crystalline nucleation; high frequency plasma deposition; highly-crystallized Ge:H film growth; inductively-coupled plasma deposition; Films; Nickel; Plasma temperature; Raman scattering; Substrates; Surface treatment;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222497
